Vishay semiconductors – C&H Technology VS-GT300YH120N User Manual
Page 7
VS-GT300YH120N
www.vishay.com
Vishay Semiconductors
Revision: 25-Jul-13
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Document Number: 94681
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Fig. 13 - Typical IGBT Energy Loss vs. I
C
, T
J
= 125 °C -
Freewheeling Diode VS-H3195D12A6B in TO-247 Package
Fig. 14 - Typical IGBT Energy Loss vs. R
g
, T
J
= 125 °C -
Freewheeling Diode VS-H3195D12A6B in TO-247 Package
Fig. 15 - Typical IGBT Switching Time vs. I
C
, T
J
= 125 °C -
Freewheeling Diode VS-H3195D12A6B in TO-247 Package
Fig. 16 - Typical IGBT Switching Time vs. R
g
,
T
J
= 125 °C, I
C
= 100 A, V
CE
= 360 V, V
GE
= 15 V, L = 500 μH
Fig. 17 - Typical t
rr
Antiparallel Diode vs. di
F
/dt, V
rr
= 400 V
Fig. 18 - Typical I
rr
Antiparallel Diode vs. di
F
/dt, V
rr
= 400 V
0
10
20
30
40
0
50
100
150
200
250
300
350
En
e
rg
y (
mJ)
Ic (A)
E
on
E
off
V
GE
= 15 V
L
=
500 μH
R
g
= 4.7
Ω
V
CC
= 600 V
20
40
60
80
100
120
140
0
10
20
30
40
Ener
g
y (mJ)
R
g
(
Ω
)
V
GE
= 15 V
L
=
500 μH
I
C
= 300 A
V
CC
= 600 V
E
on
E
off
10
100
1000
10 000
0
50
100
150
200
250
300
350
S
witchin
g
Time (ns)
Ic (A)
V
GE
= 15 V
L
=
500 μH
R
g
= 4.7
Ω
V
CC
= 600 V
t
d(off)
t
d(on)
t
f
t
r
S
witchin
g
Time (ns)
R
g
(
Ω)
10
100
1000
10 000
0
10
20
30
t
d(off)
t
d(on)
t
f
t
r
150
200
250
300
350
400
450
500
100
200
300
400
500
t
rr
(ns)
di
F
/dt (A/μs)
10 A, T
J
= 25 °C
10 A, T
J
= 125 °C
40 A, T
J
= 25 °C
40 A, T
J
= 125 °C
5
10
15
20
25
30
35
40
100
200
300
400
500
I rr
(A)
di
F
/dt (A/μs)
10 A, T
J
= 25 °C
10 A, T
J
= 125 °C
40 A, T
J
= 25 °C
40 A, T
J
= 125 °C