Rainbow Electronics AT45DQ321 - Manual (Page 6)

6 AT45DQ321 [ADVANCE DATASHEET]
DS-45DQ321-031–DFLASH–12/2012
3. Memory Array
To provide optimal flexibility, the AT45DQ321 memory array is divided into three levels of granularity comprising of
sectors, blocks, and pages.
Figure 3-1, Memory Architecture Diagram illustrates the breakdown of each level and details
the number of pages per sector and block. Program operations to the DataFlash can be done at the full page level or at
the byte level (a variable number of bytes). The erase operations can be performed at the chip, sector, block, or page
level.
Figure 3-1. Memory Architecture Diagram
Sector 0a = 8 pages
4,096/4,224 bytes
Sector 0b = 120 pages
61,440/63,360 bytes
Block = 4,096/4,224 bytes
8 Pages Sector 0a
Sector 0b
Page = 512/528 bytes
Page 0
Page 1
Page 6
Page 7
Page 8
Page 9
Page 8,190
Page 8,191
Block 0
Page 14
Page 15
Page 16
Page 17
Page 18
Block 1
Sector Architecture Block Architecture Page Architecture
Block 0
Block 1
Block 30
Block 31
Block 32
Block 33
Block 1022
Block 1023
Block 62
Block 63
Block 64
Block 65
Sector 1
Sector 63 = 128 pages
65,536/67,584 bytes
Block 2
Sector 1 = 128 pages
65,536/67,584 bytes
Sector 62 = 128 pages
65,536/67,584 bytes
Sector 2 = 128 pages
65,536/67,584 bytes