Application information, Hi i – Diodes AL8400 /AL8400Q User Manual

Page 6

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AL8400/ AL8400Q

Document number: DS35115 Rev. 4 - 2

6 of 13

www.diodes.com

August 2012

© Diodes Incorporated

AL8400 /AL8400Q

Application Information

(cont.)

Bipolar Transistor as the Pass Element

For driving currents in the region of about 50mA to about 400mA, the recommended NPN is DNLS320E in the SOT223 package. The high DC

current gain of the DNLS320E is useful in this application, in order to minimize the current in R

B

. The design procedure is as follows, referring to

Figure 4.

Figure 4 Application Circuit Using Bipolar Transistor


There are two important equations for the circuit:

LED Circuit Path:

1. V

CC

= (V

LED

+ V

CE

+ V

FB

) where V

FB

is approximately the internal reference voltage of 200mV.

The maximum total LED voltage plus the reference voltage determines the minimum supply voltage. Substituting into equation 1 yields:

FB

CEsat

max

LED

min

CC

V

V

V

V

+

+

=

where V

LEDmax

is the maximum LED chain voltage.

Control Drive Circuit Path

2. V

CC

= (V

RB

+ V

BE

+ V

FB

)

For a bipolar transistor the voltage (V

RB

) across bias resistor R

B

consists of the base current of Q2 and the output current of the AL8400. So

rearranging equation 2 yields the boundaries for allowable R

B

values:

3.

max

B

min

OUT

FB

max

BE

min

CC

max

B

I

I

V

V

V

R

+

=

where I

Bmax

is the maximum transistor base current

min

FE

LED

max

B

h

I

I

=

where h

FEmin

is the minimum DC current gain of the transistor.

4.

min

B

max

OUT

FB

min

BE

max

CC

min

B

I

I

V

V

V

R

+

=

where I

Bmin

is the minimum transistor base current

max

FE

LED

min

B

h

I

I

=

where h

FEmax

is the maximum DC current gain of the transistor.

The value of R

B

should be set somewhere between R

Bmax

and R

Bmin

with the target of trying to get I

OUT

of the AL8400 close to 1mA for nominal

conditions.

Once R

B

has been determined the value for compensation capacitor, C

L

, should be calculated.

B

L

R

ms

2

C

Finally, the bipolar selection is also influenced by the maximum power dissipation

P

TOT

= I

LED

x (V

CC

– V

LED

– V

REF

) = I

LED

x V

CE

Since this determines the package choice (

θ

JA

) in order to keep the junction temperature below the maximum value allowed.

T

J

= T

A

+ P

TOT

x

θ

JA

where

T

J(MAX)

is the maximum operating junction temperature,

T

A

is the ambient temperature,

θ

JA

is the junction to ambient thermal resistance.

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