6 address mapping – Texas Instruments TMS320C6455 User Manual

Page 21

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DDR2 memory controller data bus

DED[31:24]

(Byte Lane 3)

DED[23:16]

(Byte Lane 2)

DED[15:8]

(Byte Lane 1)

DED[7:0]

(Byte Lane 0)

32-bit memory device

16-bit memory device

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Peripheral Architecture

Figure 10

shows the byte lanes used on the DDR2 memory controller. The external memory is always

right aligned on the data bus.

Figure 10. Byte Alignment

The DDR2 memory controller supports both little endian and big endian formats. The endianness mode
determines whether byte lane 0 (DED[7:0]) is accessed as byte address 0 (little endian) or as byte
address N (big endian), where 2

n

is the memory width in bytes. Similarly, byte lane N is addresses as

either byte address 0 (big endian) or as byte address N (little endian).

The DDR2 memory controller uses the endianness mode being used by the rest of the DSP. The
endianness mode of the DSP is set during device reset (for more details, see the device-specific data
manual. The endianness mode of the DDR2 memory controller is shown on the BE bit of the DDR2
memory controller status register (DMCSTAT); BE = 1 indicates big endian mode and BE = 0 indicates
little endian mode.

2.6

Address Mapping

The DDR2 memory controller views external DDR2 SDRAM as one continuous block of memory. This
statement is true regardless of the number of memory devices located on the chip select space. The
DDR2 memory controller receives DDR2 memory access requests along with a 32-bit logical address from
the rest of the system. In turn, DDR2 memory controller uses the logical address to generate a row/page,
column, bank address, and chip selects for the DDR2 SDRAM. The number of column and bank address
bits used is determined by the IBANK and PAGESIZE fields. The chip selection pins used are determined
by the DCE0 field (see

Table 5

). The DDR2 memory controller uses up to 14 bits for the row/page

address.

Table 5. Bank Configuration Register Fields for Address Mapping

Bit Field

Bit Value Bit Description

IBANK

Defines the number of internal banks on the external DDR2 memory.

0

1 bank

1h

2 banks

2h

4 banks

3h

8 banks

PAGESIZE

Defines the page size of each page of the external DDR2 memory.

0

256 words (requires 8 column address bits)

1h

512 words (requires 9 column address bits)

2h

1024 words (requires 10 column address bits)

3h

2048 words (requires 11 column address bits)

21

SPRU970G

December 2005

Revised June 2011

C6455/C6454 DDR2 Memory Controller

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Copyright

©

2005

2011, Texas Instruments Incorporated

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