Texas Instruments TMS320C6455 User Manual

Page 36

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Using the DDR2 Memory Controller

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Table 12

displays the DDR2-533 refresh rate specification.

Table 12. DDR2 Memory Refresh Specification

Symbol

Description

Value

t

REF

Average Periodic Refresh Interval

7.8

μ

s

Therefore, the value for the REFRESH-RATE can be calculated as follows:

REFRESH_RATE = 250 MHz

×

7.8

μ

s = 1950 = 79Eh

Table 13

shows the resulting SDRFC configuration.

Table 13. SDRFC Configuration

Field

Value

Function Selection

SR

0

DDR2 memory controller is not in self-refresh mode.

REFRESH_RATE

79Eh

Set to 79Eh DDR2 clock cycles to meet the DDR2 memory refresh rate
requirement.

3.2.3

Configuring SDRAM Timing Registers (SDTIM1 and SDTIM2)

The SDRAM timing 1 register (SDTIM1) and SDRAM timing 2 register (SDTIM2) configure the DDR2
memory controller to meet the data sheet timing parameters of the attached DDR2 device. Each field in
SDTIM1 and SDTIM2 corresponds to a timing parameter in the DDR2 data sheet specification.

Table 14

and

Table 15

display the register field name and corresponding DDR2 data sheet parameter name along

with the data sheet value. These tables also provide a formula to calculate the register field value and
displays the resulting calculation. Each of the equations include a minus 1 because the register fields are
defined in terms of DDR2 clock cycles minus 1. See

Section 4.5

and

Section 4.6

for more information.

Table 14. SDTIM1 Configuration

DDR2 SDRAM

Register Field

Data Sheet

Data Sheet

Formula (Register Field Must

Field

Name

Parameter Name

Description

Value (ns)

Be

)

Value

T_RFC

t

RFC

Refresh cycle time

127.5

(t

RFC

×

f

DDR2_CLK

) - 1

31

T_RP

t

RP

Precharge command to

15

(t

RP

×

f

DDR2_CLK

) - 1

3

refresh or activate
command

T_RCD

t

RCD

Activate command to

15

(t

RCD

×

f

DDR2_CLK

) - 1

3

read/write command

T_WR

t

WR

Write recovery time

15

(t

WR

×

f

DDR2_CLK

) - 1

3

T_RAS

t

RAS

Active to precharge

45

(t

RAC

×

f

DDR2_CLK

) - 1

11

command

T_RC

t

RC

Activate to Activate

60

(t

RC

×

f

DDR2_CLK

) - 1

14

command in the same
bank

T_RRD

t

RRD

Activate to Activate

10

( (4*t

rrd

+ 2*t

ck

) / (4*t

ck

) ) - 1

2

command in a different
bank

T_WTR

t

WTR

Write to read command

7.5

(t

WTR

×

f

DDR2_CLK

) - 1

1

delay

36

C6455/C6454 DDR2 Memory Controller

SPRU970G

December 2005

Revised June 2011

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Copyright

©

2005

2011, Texas Instruments Incorporated

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