Table 26. register map – Rainbow Electronics MAX6871 User Manual

Page 39

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address pointer automatically increments after each
data byte, except when the address pointer is already
at 45h. If the address pointer is already 45h, and more
data bytes are being sent, these subsequent bytes
overwrite address 45h repeatedly, leaving only the last
data byte sent stored at this register address.

For the configuration EEPROM, valid address pointers
range from 8000h to 8045h. Registers 8046h to 804Fh
are reserved and should not be overwritten. Register
addresses from 8050h to 80FFh return a NACK from
the MAX6870/MAX6871. When using the block write
protocol, the address pointer automatically increments
after each data byte, except when the address pointer
is already at 8045h. If the address pointer is already
8045h, and more data bytes are being sent, these sub-
sequent bytes overwrite address 8045h repeatedly,
leaving only the last data byte sent stored at this regis-
ter address.

For the user EEPROM, valid address pointers range
from 8100h to 81FFh and 8200h to 82FFh. Block write
and block read protocols allow the address pointer to
reset (to 8100h or 8200h) when attempting to write or
read beyond 81FFh or 82FFh.

Configuration EEPROM

The configuration EEPROM addresses range from 8000h
to 8045h. Write data to the configuration EEPROM to
automatically set up the MAX6870/MAX6871 upon power-
up. Data transfers from the configuration EEPROM to the
configuration registers when ABP exceeds UVLO during
power-up or after a software reboot. After ABP exceeds
UVLO, an internal 1MHz clock starts after a 5µs delay,
and data transfer begins. Data transfer disables access

to the configuration registers and EEPROM. The data
transfer from EEPROM to configuration registers takes
3.5ms (max). Read configuration EEPROM data at any
time after power-up or software reboot. Write commands
to the configuration EEPROM are allowed at any time
after power-up or software reboot, unless the configura-
tion lock bit is set (see Table 30). The maximum cycle
time to write a single byte is 11ms (max).

User EEPROM

The 512 byte user EEPROM addresses range from
8100h to 82FFh (see Figure 8). Store software-revision
data, board-revision data, and other data in these reg-
isters. The maximum cycle time to write a single byte is
11ms (max).

Configuration Register Bank and EEPROM

The configuration registers can be directly modified by
the serial interface without modifying the EEPROM after
the power-up procedure terminates and the configura-
tion EEPROM data has been loaded into the configura-
tion register bank. Use the write byte or block write
protocols to write directly to the configuration registers.
Changes to the configuration registers take effect
immediately and are lost upon power removal.

At device power-up, the register bank loads configura-
tion data from the EEPROM. Configuration data may be
directly altered in the register bank during application
development, allowing maximum flexibility. Transfer the
new configuration data, byte by byte, to the configura-
tion EEPROM with the write byte protocol. The next
device power-up or software reboot automatically loads
the new configuration.

MAX6870/MAX6871

EEPROM-Programmable Hex/Quad

Power-Supply Sequencers/Supervisors with ADC

______________________________________________________________________________________

39

Table 26. Register Map

REGISTER

ADDRESS

EEPROM

MEMORY

ADDRESS

READ/

WRITE

DESCRIPTION

00h

8000h

R/W

IN1 primary undervoltage detector threshold (Table 2).

01h

8001h

R/W

IN2 primary undervoltage detector threshold (Table 3).

02h

8002h

R/W

IN3 primary undervoltage detector threshold (Table 4).

03h

8003h

R/W

IN4 primary undervoltage detector threshold (Table 4).

04h

8004h

R/W

IN5 primary undervoltage detector threshold (MAX6870 only) (Table 4).

05h

8005h

R/W

IN6 primary undervoltage detector threshold (MAX6870 only) (Table 4).

06h

8006h

R/W

IN1 secondary undervoltage/overvoltage detector threshold (Table 2).

07h

8007h

R/W

IN2 secondary undervoltage/overvoltage detector threshold (Table 3).

08h

8008h

R/W

IN3 secondary undervoltage/overvoltage detector threshold (Table 4).

09h

8009h

R/W

IN4 secondary undervoltage/overvoltage detector threshold (Table 4).

0Ah

800Ah

R/W

IN5 secondary undervoltage/overvoltage detector threshold (MAX6870 only) (Table 4).

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