3 dc characteristics – Samsung MUXONENAND A-DIE KFM2G16Q2A User Manual
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MuxOneNAND2G(KFM2G16Q2A-DEBx)
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MuxOneNAND4G(KFN4G16Q2A-DEBx)
4.3 DC Characteristics
NOTE :
1) CE should be VIH for RDY. IOBE should be ‘0’ for INT.
2) I
CC
active for Host access
3) I
CC
active for Internal operation. (without host access)
4) Vccq is equivalent to Vcc-IO
Parameter
Symbol
Test Conditions
RMS Value
Unit
Min
Typ
Max
Input Leakage Current
I
LI
V
IN
=V
SS
to V
CC
, V
CC
=V
CCmax
Single
- 1.0
-
+ 1.0
µA
DDP
- 2.0
-
+ 2.0
Output Leakage Current
I
LO
V
OUT
=V
SS
to V
CC
, V
CC
=V
CCmax
,
CE or OE=V
IH
(Note 1)
Single
- 1.0
-
+ 1.0
µA
DDP
- 2.0
+ 2.0
Active Asynchronous Read Current
(Note 2)
I
CC1
CE=V
IL
, OE=V
IH
-
8
15
mA
Active Burst Read Current (Note 2)
I
CC2R
CE=V
IL
, OE=V
IH
,
WE=V
IH
66MHz
-
20
30
mA
83MHz
-
25
35
mA
1MHz
-
3
4
mA
66MHz
(DDP)
-
30
38
mA
83MHz
(DDP)
-
35
45
mA
1MHz
(DDP)
-
3
4
mA
Active Burst Write Current (Note 2)
I
CC2W
CE=V
IL
, OE=V
IH,
WE=V
IL
66MHz
-
20
30
mA
83MHz
-
25
35
mA
1MHz
-
3
4
mA
66MHz
(DDP)
-
30
38
mA
83MHz
(DDP)
-
35
45
mA
1MHz
(DDP)
-
3
4
mA
Active Asynchronous Write Current
(Note 2)
I
CC3
CE=V
IL
, OE=V
IH
Single
-
8
15
mA
DDP
-
17
25
mA
Active Load Current (Note 3)
I
CC4
CE=V
IL
, OE=V
IH
, WE=V
IH
-
30
40
mA
Active Program Current (Note 3)
I
CC5
CE=V
IL
, OE=V
IH
, WE=V
IH
-
25
35
mA
Active Erase Current (Note 3)
I
CC6
CE=V
IL
, OE=V
IH
, WE=V
IH
-
20
30
mA
Multi Block Erase Current (Note 3)
I
CC7
CE=V
IL
, OE=V
IH
, WE=V
IH
, 64blocks
-
20
30
mA
Standby Current
I
SB
CE= RP=V
CC
± 0.2V
Single
-
10
50
µA
DDP
-
20
100
Input Low Voltage
V
IL
-
-0.5
-
0.4
V
Input High Voltage (Note 4)
V
IH
-
V
CCq
-
0.4
-
V
CCq
+0.
4
V
Output Low Voltage
V
OL
I
OL
= 100
µA ,V
CC
=V
CCmin
, V
CCq
=V
CCqmin
-
-
0.2
V
Output High Voltage
V
OH
I
OH
= -100
µA , V
CC
=V
CCmin
, V
CCq
=V
CCqmin
V
CCq
-
0.1
-
-
V