23 start block address register f24ch (r/w), 24 end block address register f24dh – Samsung MUXONENAND A-DIE KFM2G16Q2A User Manual
Page 77
MuxOneNAND2G(KFM2G16Q2A-DEBx)
- 77 -
FLASH MEMORY
MuxOneNAND4G(KFN4G16Q2A-DEBx)
2.8.23 Start Block Address Register F24Ch (R/W)
This Read/Write register shows the NAND Flash block address in the Write Protection mode. Setting this register precedes a 'Lock Block'
command, 'Unlock Block' command, or ‘Lock-Tight' Command.
F24Ch, default = 0000h
SBA Information[10:0]
2.8.24 End Block Address Register F24Dh
This register is reserved for future use.
2.8.25 NAND Flash Write Protection Status Register F24Eh (R)
This Read register shows the Write Protection Status of the NAND Flash memory array.
To read the write protection status, FBA(DFS and DBS also in case of DDP) has to be set before reading the register
.
F24Eh, default = 0002h
Write Protection Status Information[2:0]
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved(000000)
SBA
Device
Number of Block
SBA
2Gb
2048
[10:0]
Item
Definition
Description
SBA
Start Block Address
Precedes Lock Block, Unlock Block, or Lock-Tight commands
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved(0000000000000)
US
LS
LTS
Item
Definition
Description
US
Unlocked Status
1 = current NAND Flash block is unlocked
LS
Locked Status
1 = current NAND Flash block is locked
Or First Block of NAND Flash Array is Locked to be OTP
LTS
Locked-Tight Status
1 = current NAND Flash block is locked-tight