13 start address5 register f104h (r/w), 14 start address6 register f105h, 15 start address7 register f106h – Samsung MUXONENAND A-DIE KFM2G16Q2A User Manual
Page 61: 16 start address8 register f107h (r/w)
MuxOneNAND2G(KFM2G16Q2A-DEBx)
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FLASH MEMORY
MuxOneNAND4G(KFN4G16Q2A-DEBx)
2.8.13 Start Address5 Register F104h (R/W)
This Read/Write register describes the number of page in Synchronous Burst Block Read.
F104h, default = 0000h
Flash Page Count (FPC) Information
NOTE :
Synchronous Burst Block Read are NOT able to be perforformed with 1 or 2pages.
2.8.14 Start Address6 Register F105h
This register is reserved for future use.
2.8.15 Start Address7 Register F106h
This register is reserved for future use.
2.8.16 Start Address8 Register F107h (R/W)
This Read/Write register describes the NAND Flash start page address in a block for a page load, copy back program, or program operation
and the NAND Flash start sector address in a page for a load, copy back program, or program operation.
F107h, default = 0000h
NOTE :
1) In case of ‘2X Cache Program’, the host programs data on same FPA of different Planes.
2) In case of ‘ Synchronous Burst Block Read’, ‘Cache Read Operation’, ‘2X Program’ and ‘2X Cache Program’,
FSA has to be set to 00.
Start Address8 Information
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved(0000000000)
FPC
FPC
Number of Page
000000 (Default)
64 page
000011
3 page
000100
4 page
..
..
111111
63 page
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved (00000000)
FPA
1)
FSA
2)
Item
Description
Default Value
Range
FPA
NAND Flash Page Address
000000
000000 ~ 111111,
6 bits for 64 pages
FSA
NAND Flash Sector Address
00
00 ~ 11,
2 bits for 4 sectors