11 start address3 register f102h (r/w), 12 start address4 register f103h (r/w) – Samsung MUXONENAND A-DIE KFM2G16Q2A User Manual
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MuxOneNAND2G(KFM2G16Q2A-DEBx)
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FLASH MEMORY
MuxOneNAND4G(KFN4G16Q2A-DEBx)
2.8.11 Start Address3 Register F102h (R/W)
This Read/Write register describes the NAND Flash destination block address which will be copy back programmed. Also, this register indi-
cates the block address for the first page to be read in Cache Read Operation.
F102h, default = 0000h
Start Address3 Information
2.8.12 Start Address4 Register F103h (R/W)
This Read/Write register describes the NAND Flash destination page address in a block and the NAND Flash destination sector address in a
page for copy back programming. Also, this register describes the first page and sector address to be loaded in Cache Read Operation.
F103h, default = 0000h
NOTE :
1) In case of ‘Cache Read Operation’, FCSA has to be set to 00.
Start Address4 Information
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved(00000)
FCBA
Device
Number of Block
FBA
2Gb
2048
FCBA[10:0]
Register Information
Description
FCBA
NAND Flash Copy Back Block Address &
Block Address for the first page to be read in Cache Read Operation
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved(00000000)
FCPA
FCSA
1)
Item
Description
Default Value
Range
FCPA
NAND Flash Copy Back Page Address &
First Page Address of Cache Read
000000
000000 ~ 111111,
6 bits for 64 pages
FCSA
NAND Flash Copy Back Sector Address &
First Sector Address of Cache Read
00
00 ~ 11,
2 bits for 4 sectors