Samsung MUXONENAND A-DIE KFM2G16Q2A - Manual (Page 169)

MuxOneNAND2G(KFM2G16Q2A-DEBx)
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FLASH MEMORY
MuxOneNAND4G(KFN4G16Q2A-DEBx)
7.1.3 Determining Rp Value (DDP, QDP only)
For general operation, INT operates as normal output pin, so that tF is equivalent to tR (below 10ns). But since INT operates as open drain
with 50K ohm for Reset (Hot/Warm/NAND Flash Core) operations and ‘2X program operation(007Dh)’ case at DDP option, the pull-up resis-
tor value is related to tr(INT). And appropriate value can be obtained with the following reference charts.
NOTE : 1) Refer to chapter 2.8.10 Start Address Register F101h DDP Block Diagram
Busy State
Ready Vcc
VOH
tf tr
VOL
Vss
~50k ohm
INT 1)
Vcc or Vccq
Rp
INT pol = ‘High’ (Default)
tr
,t
f
Ibus
y [mA
]
Rp(ohm)
Ibusy
tr[us]
KFN4G16Q2A @ Vcc = 1.8V, Ta = 25 °C , C
L
= 30pF
1K 10K 20K 30K
0.1373
tf[ns]
1.046
1.658
2.062
2.717 2.676 2.674 2.673
1.78
0.18
0.09
40K 50K
2.349
2.565
2.673 2.672
0.045
0.06
0.036
Open(100K)
3.145
0.018
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ª
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