Samsung MUXONENAND A-DIE KFM2G16Q2A - Manual (Page 147)

MuxOneNAND2G(KFM2G16Q2A-DEBx)
- 147 -
FLASH MEMORY
MuxOneNAND4G(KFN4G16Q2A-DEBx)
6.3 Synchronous Burst Block Read Operation Timing
See AC Characteristics table 5.4 and 5.7.
WE CE
CL
K
t DS
t WP
L
t CS
t WP
H
t WC
AA
FP
A
FB
A
AA
ADQ
0-
OE
t AA
VD
H
t AA
VD
S
IN
T
t CH
t CS
AV
D
V
IL
t DH
t RD2
CA
SB
BRCD
FPC
AA
AD
Q15
Hi-Z
D0
D1
D2
RD
Y
NOTE
:
Asynchro
nous write
was used in t
h
is
timing
d
iagra
m
. Synchro
nous writ
e
is
also possible
.
1.
A
A
=
A
ddre
ss of
ad
dress
regist
er
CA
= Add
ress
of
command reg
ister
S
BBRCD =
S
yn
ch
rono
us
Bu
rst Blo
ck Read Comman
d
FB
A =
Flas
h Blo
ck
Add
res
s
FP
A
= Flash Page
A
ddress
B
SA = Buf
ferRAM Sec
tor Add
res
s
FP
C=
Numbe
r of Flash Pag
e
t
o
be rea
d
(3
pages ~
64
pages)
Sy
nc
hr
onou
s Bu
rs
t Bloc
k R
ead Command
Se
que
nc
e
. . . . . . . . . . . . . . . . . . . . . . . .
St
ar
t A
dd
BS
A
AA