8 8-word linear burst write mode, 9 burst write operation followed by burst read – Samsung MUXONENAND A-DIE KFM2G16Q2A User Manual

Page 152

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MuxOneNAND2G(KFM2G16Q2A-DEBx)

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FLASH MEMORY

MuxOneNAND4G(KFN4G16Q2A-DEBx)

6.8 8-Word Linear Burst Write Mode

See AC Characteristics Table 5.8

6.9 Burst Write Operation followed by Burst Read

See AC Characteristics Table 5.8

t

CES

t

AVDS

t

AVDH

t

ACS

t

ACH

t

RDYO

t

WDH

t

WDS

t

CLK

Hi-Z

CE

CLK

AVD

OE

RDY

t

RDYS

t

RDYA

A/DQ0:

A/DQ15

t

CER

t

CEZ

D0

D1

D2

D3

D4

D5

D7

t

CLKH

t

CLKL

Hi-Z

t

CER

WE

t

WES

t

WEH

t

CEH

-1

0

1

2

3

4

BRWL = 4

t

CES

t

AVDS

t

AVDH

t

ACS

t

ACH

t

RDYO

t

WDH

t

WDS

t

CLK

Hi-Z

CE

CLK

AVD

OE

RDY

t

RDYS

t

RDYA

BRWL = 4

A/DQ0:

A/DQ15

t

CE

D1

D2

D7

t

CLKH

t

CLKL

Hi-Z

t

CER

WE

D0

D1

D7

t

CEHP

t

WES

t

CES

t

CE

t

CER

t

AVDS

t

AVDH

t

ACS

t

ACH

t

RDYO

t

RDYS

t

RDYA

t

BA

t

WEH

-1

0

1

2

3

4

t

AVDO

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