Samsung MUXONENAND A-DIE KFM2G16Q2A - Manual (Page 159)

MuxOneNAND2G(KFM2G16Q2A-DEBx)
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FLASH MEMORY
MuxOneNAND4G(KFN4G16Q2A-DEBx)
6.16 Block Erase Operation Timing
See AC Characteristics Tables 5.5, 5.7 and 5.9.
NOTE :
1) AA = Address of address register
CA = Address of command register
ECD = Erase Command
EMA = Address of memory to be erased
SA = Address of status register
AA* = Address of Start Address1 Register(for Flash Block Address)
PMB = DFS & FBA(Flash Block address) of memory to be programmed next time
2) For “In progress” and “complete” status, refer to status register.
3) Status reads in this figure is asynchronous read, but status read in synchronous mode is also supported.
Erase Command Sequence
WE
CE
CLK
t AVDP
t AAVDS
t AAVDH
t DS
t DH
t CH
t WPL
t WPH
t WC
ECD CA EMA AA
A/DQ0:
A/DQ15
OE
Read Status Data
V IL
t WEA
INT
t CS
AVD
t CER
RDY
Hi-Z
bit
t BERS1
SA SA In
Progress
Completed
t CER
t CEZ
t CEZ
≈
≈
≈
≈
≈
≈
AA
* PMB