Samsung MUXONENAND A-DIE KFM2G16Q2A User Manual

Page 164

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MuxOneNAND2G(KFM2G16Q2A-DEBx)

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MuxOneNAND4G(KFN4G16Q2A-DEBx)

6.22 Toggle Bit Timing in Asynchronous Read (VA Transition Before AVD Low)

See AC Characteristics Table 5.5

NOTE :
1) VA=Valid Read Address, RD=Read Data.
2) Before IOBE is set to 1, RDY and INT pin are High-Z state.
3) Refer to chapter 5.5 for tASO description and value.

6.23 Toggle Bit Timing in Asynchronous Read (VA Transition After AVD Low)

See AC Characteristics Table 5.5

NOTE :
1) VA=Valid Read Address, RD=Read Data.
2) Before IOBE is set to 1, RDY and INT pin are High-Z state.
3) Refer to chapter 5.5 for tASO description and value.

t

OE

Status RD

1)

t

CE

t

OEZ

t

AVDP

CE

OE

WE

A/DQ0:

AVD

A/DQ15

Hi-Z

RDY

2)

t

AA

t

RC

t

CA

t

CEZ

t

CER

t

AVDO

Hi-Z

VA

Status RD

Hi-Z

t

ASO

t

AAVDH

t

AAVDS

VA

1)

t

OE

Status RD

1)

t

OEZ

t

ACC

t

AAVDH

t

AVDP

t

AAVDS

CE

OE

WE

A/DQ0:

AVD

A/DQ15

t

CEZ

t

CA

t

CER

t

AVDO

Hi-Z

Hi-Z

RDY

2)

t

RC

t

CE

Hi-Z

VA

Status RD

t

CA

t

ASO

VA

1)

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