0 ac characteristics, 1 ac test conditions, 2 device capacitance – Samsung FLEX-MUXONENAND KFN8GH6Q4M User Manual

Page 110: 3 valid block characteristics, Flex-muxonenand4g(kfm4gh6q4m-debx), 1 ac test conditions 5.2 device capacitance, Capacitance

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Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)

- 110 -

FLASH MEMORY

Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)

Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)

5.0 AC CHARACTERISTICS

5.1 AC Test Conditions

5.2 Device Capacitance

CAPACITANCE

(T

A

= 25

°C, V

CC

= 1.8V, f = 1.0MHz)

NOTE :
1) Capacitance is periodically sampled and not 100% tested.

5.3 Valid Block Characteristics

NOTE :
1) The

device

may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is presented with

both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain five or more bad bits which cause status failure during Program and
Erase operation

.

Do not erase or program factory-marked bad blocks.

2) The 1st block, which is placed on 00h block address, is guaranteed to be a valid block up to 1K program/erase cycles with 4bit/528Byte ECC.

Parameter

Value (66MHz)

Value (83MHz)

Input Pulse Levels

0V to V

CC

0V to V

CC

Input Rise and Fall Times

CLK

3ns

2ns

other inputs

5ns

2ns

Input and Output Timing Levels

V

CC

/2

V

CC

/2

Output Load

C

L

= 30pF

C

L

= 30pF

Item

Symbol

Test Condition

Single

DDP

QDP

Unit

Min

Max

Min

Max

Min

Max

Input Capacitance

C

IN1

V

IN

=0V

-

10

-

20

-

40

pF

Control Pin Capacitance

C

IN2

V

IN

=0V

-

10

-

20

-

40

Output Capacitance

C

OUT

V

OUT

=0V

-

10

-

20

-

40

INT Capacitance

C

INT

V

OUT

=0V

-

10

-

20

-

40

Parameter

Symbol

Min

Typ.

Max

Unit

Valid Block Number

Single

N

VB

998

-

1024

Blocks

DDP

1996

-

2048

QDP

3993

-

4096

0V

V

CC

V

CC

/2

V

CC

/2

Input Pulse and Test Point

Input & Output

Test Point

Output Load

Device

Under

Test

* C

L

= 30pF including scope

and Jig capacitance

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