Samsung FLEX-MUXONENAND KFN8GH6Q4M - Manual (Page 63)

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
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FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
Data Protection Operation Flow Diagram
* Samsung strongly recommends to follow the above flow chart
NOTE :
1) ‘Write 0 to interrupt register’ step may be ignored when using INT auto mode. Refer to chapter 2.8.18.1
Start
Lock/Unlock/Lock-Tight
Write ‘lock/unlock/lock-tight’
Add: F220h
DQ=002Ah/0023h/002Ch
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Write 0 to interrupt register 1)
Add: F241h DQ=0000h
Command
completed
Write ‘DFS*’, of Flash
Add: F100h DQ=DFS*
Write ‘SBA’ of Flash
Add: F24Ch DQ=SBA
Select DataRAM for DDP
Add: F101h DQ=DBS*
Read Controller Status
Add: F240h
DQ[10]=Error
Register
DQ[10]=0?
Error
YES NO
completed
* DBS, DFS is for DDP