Flex-muxonenand4g(kfm4gh6q4m-debx) – Samsung FLEX-MUXONENAND KFN8GH6Q4M User Manual

Page 75

Advertising
background image

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)

- 75 -

FLASH MEMORY

Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)

Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)

Program Operation Flow Diagram

NOTE :
1) DBS must be set before data input.
2) Data input could be done anywhere between "Start" and "Write Program Command".
3) FSA must be 00 within program operation.
4) BSA must be 1000 and BSC must be 000.
5) Writing System Configuration Register is optional.
6) ‘Write 0 to interrupt register’ step may be ignored when using INT auto mode. Refer to chapter 2.8.18.1

During the execution of the Internal Program Routine, the host is not required to provide any further controls or timings. Furthermore, all com-
mands, except a Reset command, will be ignored. A reset during a program operation will cause data corruption at the corresponding location.

If a program error is detected at the completion of the Internal Program Routine, map out the block, including the page in error, and copy the
target data to another block. An error is signaled if DQ10 = "1" of Controller Status Register(F240h).

If Power off occurs during a Program operation, the page that is being programmed might be corrupted. Data from paired pages may be
affected.

Start

Data Input

Write ‘DFS*, FBA’ of Flash

Add: F100h DQ=DFS*, FBA

Write ‘FPA, FSA’ of Flash

Add: F107h DQ=FPA, FSA

3)

Select DataRAM for DDP

1)

Add: F101h DQ=DBS*

Write Data into DataRAM

2)

ADD: DataRAM DQ=Data(4KB)

Write ‘Program’ Command

Add: F220h

DQ=0080h

Completed?

Wait for INT register

low to high transition

Add: F241h DQ[15]=INT

NO

YES

* DBS, DFS is for DDP

: If program operation results in an error, map out

the block including the page in error and copy the

target data to another block.

*

Write 0 to interrupt register

6)

Add: F241h DQ=0000h

Program completed

Read Controller

Status Register

Add: F240h DQ[10]=Error

DQ[10]=0?

Program Error

YES

NO

Write ‘BSA, BSC’ of DataRAM

Add: F200h DQ=0800h

4)

Read Write Protection Status

Add: F24Eh DQ=US,LS,LTS

Write System Configuration

Add: F221h DQ=ECC

Register

5)

Advertising
This manual is related to the following products: