Samsung FLEX-MUXONENAND KFN8GH6Q4M - Manual (Page 125)

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
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FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
6.14 Block Erase Operation Timing
See AC Characteristics Table 5.7 and Table 5.9
NOTE :
1) AA = Address of address register
CA = Address of command register
ECD = Erase Command
EMA = Address of memory to be erased
SA = Address of status register
2) For “In progress” and “complete” status, refer to status register.
3) Status reads in this figure is asynchronous read, but status read in synchronous mode is also supported.
Erase Command Sequence
WE
CE
CLK
t AVDP
t AAVDS
t AAVDH
t DS
t DH
t CH
t WPL
t WPH
t WC
SA SA In
Progress
Completed ECD CA EMA AA
A/DQ0:
A/DQ15
OE
Read Status Data
V IL
≈
≈
≈
≈
≈
≈
t WEA
t BERS1
INT
t CS
AVD
t CER
Hi-Z
t CEZ
t CER
bit
t CEZ