Samsung FLEX-MUXONENAND KFN8GH6Q4M - Manual (Page 106)

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
- 106 -
FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
Invalid Block Table Creation Flow Chart
3.16.2 Invalid Block Replacement Operation
Within its life time, additional invalid blocks may develop with NAND Flash Array memory. Refer to the device's qualification report for the
actual data.
The following possible failure modes should be considered to implement a highly reliable system.
In the case of a status read failure after erase or program, a block replacement should be done. Program status failure
during a page program does not affect the data of the other pages in the same block within a SLC partition, while Progrm status failure could
contaminate the data of the paired page within a MLC partition. So, users must make sure how software handle the program failure occurrs.
Block Failure Modes and Countermeasures
Failure Mode Detection and Countermeasure sequence
Erase Failure Status Read after Erase --> Block Replacement
Program Failure Status Read after Program --> Block Replacement
Four Bit Failure in Load Operation Error Correction by ECC mode of the device
*
Start
Set Block Address = 0
Check
Increment Block Address
Last Block ?
End
No
Yes
Yes
Create (or update)
No
Invalid Block(s) Table "FFFFh" ?
Check "FFFFh" at the 1st word of sector 0
of spare area in the first page in the block
either SLC partition or MLC partition