Samsung FLEX-MUXONENAND KFN8GH6Q4M - Manual (Page 114)

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
- 114 -
FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
5.9 AC Characteristics for Load/Program/Erase Performance
See Timing Diagrams 6.9, 6.10, 6.11, 6.12, 6.13 and 6.14
NOTE :
1) These parameters are tested based on INT bit of interrupt register. Because the time on INT pin is related to the pull-up and pull-down resistor value.
5.10 AC Characteristics for INT Auto Mode
See Timing Diagram 6.22
Parameter Symbol Min Typ Max Unit
Sector Load time(Note 1) t RD1
SLC - 25 75 µs
MLC 30 100 µs
Page Load time(Note 1) t RD2
SLC - 45 400 µs
MLC - 50 420 µs
Page Program time(Note 1) t PGM2
SLC - 240 770 µs
MLC 1000 5000 µs
OTP Access Time(Note 1) t OTP
- 500 700 ns
Lock/Unlock/Lock-tight(Note 1) t LOCK
- 500 700 ns
All Block Unlock Time(Note 1) t ABU
- 2 3 µs
Erase Suspend Time(Note 1) t ESP
- 400 500 µs
Erase Resume Time(Note 1) t ERS1
- 0.5 11 ms
Number of Partial Program Cycles in the page (Including main and
spare area)
NOP
SLC - - 1 cycles
MLC - - 1 cycles
Block Erase time (Note 1) t BERS1 - 0.5 11 ms
Parameter Symbol Min Max Unit
Command Input to INT Low t
WB
- 200 ns