Samsung FLEX-MUXONENAND KFN8GH6Q4M - Manual (Page 126)

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
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FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
6.15 Cold Reset Timing
NOTE :
1) Bootcode copy operation starts 400us later than POR activation.
The system power should reach Vcc after POR triggering level(typ. 1.5V) within 400us for valid boot code data.
2) 1KB Bootcode copy and internal update operation take 250us(estimated) from sector0 and 1/page0/block0 of NAND Flash array to BootRAM.
Host can read Bootcode in BootRAM(1K bytes) after Bootcode copy completion.
3) INT register goes ‘Low’ to ‘High’ on the condition of ‘Bootcode-copy done’ and RP rising edge.
If RP goes ‘Low’ to ‘High’ before ‘Bootcode-copy done’, INT register goes to ‘Low’ to ‘High’ as soon as ‘Bootcode-copy done’
System Power
Sleep Bootcode copy Idle
Bootcode - copy done
POR triggering level
3)
2)
RP
INT
OneNAND
Operation
0 (default) 1
IOBE bit
1 (default) INTpol bit
High-Z
1)
INT bit 0 (default) 1