Flex-muxonenand4g(kfm4gh6q4m-debx) – Samsung FLEX-MUXONENAND KFN8GH6Q4M User Manual
Page 130
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
- 130 -
FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
6.20 Toggle Bit Timing in Asynchronous Read (VA Transition Before AVD Low)
See AC Characteristics Table 5.5
NOTE :
1) VA=Valid Read Address, RD=Read Data.
2) Before IOBE is set to 1, RDY and INT pin are High-Z state.
3) Refer to chapter 5.5 for tASO description and value.
6.21
Toggle Bit Timing in Asynchronous Read (VA Transition After AVD Low)
See AC Characteristics Table 5.5
NOTE :
1) VA=Valid Read Address, RD=Read Data.
2) Before IOBE is set to 1, RDY and INT pin are High-Z state.
3) Refer to chapter 5.5 for tASO description and value.
t
OE
Status RD
1)
t
CE
t
OEZ
t
AVDP
CE
OE
WE
A/DQ0:
AVD
A/DQ15
Hi-Z
RDY
2)
t
AA
t
RC
t
CA
t
CEZ
t
CER
t
AVDO
Hi-Z
Note :
VA
Status RD
Hi-Z
t
ASO
t
AAVDH
t
AAVDS
VA
1)
t
OE
Status RD
1)
t
OEZ
t
ACC
t
AAVDH
t
AVDP
t
AAVDS
CE
OE
WE
A/DQ0:
AVD
A/DQ15
t
CEZ
t
CA
t
CER
t
AVDO
Hi-Z
Hi-Z
RDY
2)
t
RC
t
CE
Hi-Z
VA
Status RD
t
CA
t
ASO
VA
1)