Samsung FLEX-MUXONENAND KFN8GH6Q4M - Manual (Page 135)

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
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FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
7.1.3 Determining Rp Value (DDP, QDP Only)
For general operation, INT operates as normal output pin, so that tF is equivalent to tR (below 10ns). But since INT operates as open drain
with 50K ohm for Reset (Cold/Hot/Warm/NAND Flash Core) operations and ‘Cache program operation’ case at DDP option, the pull-up resis-
tor value is related to tr(INT). And appropriate value can be obtained with the following reference charts.
Busy State
Ready Vcc
VOH
tf tr
VOL
Vss
~50k ohm
INT
Vcc or Vccq
Rp
INT pol = ‘High’ (Default)
tr
,t
f
Ibus
y [mA
]
Rp(ohm)
Ibusy
tr[us]
KFN8GH6Q4M @ Vcc = 1.8V, Ta = 25 °C , C
L
= 30pF
1K 10K 20K 30K
0.146
tf[ns]
1.126
2.192
2.912
5.98 5.74 5.73 5.72
1.76
0.18
0.09
40K 50K
3.485
3.952
5.72 5.72
0.045
0.06
0.036
Open(100K)
5.416
0.000
ª
ª
ª
ª
ª
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