Samsung FLEX-MUXONENAND KFN8GH6Q4M - Manual (Page 4)

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
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FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
1.0 INTRODUCTION
This specification contains information about the Samsung Electronics Company Flex-MuxOneNAND ™ ‚ Flash memory product family. Sec-
tion 1.0 includes a general overview, revision history, and product ordering information.
Section 2.0 describes the Flex-MuxOneNAND device. Section 3.0 provides information about device operation. Electrical specifications and
timing waveforms are in Sections 4.0 through 6.0. Section 7.0 provides additional application and technical notes pertaining to use of the Flex-
MuxOneNAND. Package dimensions are found in Section 8.0
1.1 Ordering Information
Density Part No. V CC (core & IO) Temperature PKG
4Gb KFM4GH6Q4M-DEBx 1.8V(1.7V~1.95V) Extended 63FBGA(LF)
8Gb KFN8GH6Q4M-DEBX 1.8V(1.7V~1.95V) Extended 63FBGA(LF)
16Gb(TBD) KFKAGH6Q4M-DEBX 1.8V(1.7V~1.95V) Extended 63FBGA(LF)
K F x x H 6 Q 4 M - D E x x
Samsung
OneNAND Memory
Device Type
M : Mux type Single Chip
N : Mux type Dual Chip
K: Mux type Quad Chip
Density
4G : 4Gb
8G : 8Gb
AG : 16Gb
(TBD)
Operating Temperature Range
E = Extended Temp. (-30
°C to 85 °C)
Page Architecture
4: 4KB Page
Version
1st Generation
Product Line designator
B : Include Bad Block
D : Daisy Sample
Operating Voltage Range
Q : 1.8V(1.7 V to 1.95V)
Package
D : FBGA(Lead Free)
Organization
6: x16 Organization
Speed
6 : 66MHz
8 : 83MHz
Technology
H : Flex