3 product features, Flex-muxonenand4g(kfm4gh6q4m-debx) – Samsung FLEX-MUXONENAND KFN8GH6Q4M User Manual

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Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)

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FLASH MEMORY

Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)

Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)

1.3 Product Features

Device Architecture

• Design Technology:

• Supply Voltage:

• Host Interface:

• 5KB Internal BufferRAM:

• NAND Array:

Device Performance

• Host Interface Type:












• Programmable Burst Read Latency:


• Multiple Reset Modes:

• Low Power Dissipation:






• Reliable CMOS Floating-Gate Technology

System Hardware

• Voltage detector generating internal reset signal from Vcc

• Hardware reset input (RP)

• Data Protection Modes


• User-controlled One Time Programmable(OTP) area

• Internal 4bit ECC

• Internal Bootloader supports Booting Solution in system

• Handshaking Feature


• Detailed chip information

Package size

• 4G products

• 8G products

• 16G products(TBD)

M die
1.8V (1.7V ~ 1.95V)
16 bit
1KB BootRAM, 4KB DataRAM
SLC : (4K+128)B Page Size
(256K+8K)B Block Size (64pages)
MLC : (4K+128)B Page Size
(512K+16K)B Block Size (128pages)

Synchronous Burst Read
- Up to 66MHz / 83MHz clock frequency
- Linear Burst 4-, 8-, 16-, 32-words with wrap around
- Continuous 1K words Sequential Burst
Synchronous Write
- Up to 66MHz / 83MHz clock frequency
- Linear Burst 4-, 8-, 16-, 32-, 1K-words with wrap around
- Continuous 1K words Sequential Burst
Asynchronous Random Read
- 76ns access time
Asynchronous Random Write
Latency 3,4(Default),5,6 and 7

1~40MHz : Latency 3 available
1~66MHz : Latency 4,5,6 and 7 available

Over 66MHz : Latency 6,7 available

Cold/Warm/Hot/NAND Flash Core Reset
Typical Power,
- Standby current : 10uA (Single)
- Synchronous Burst Read current(66MHz/83MHz, single) : 20/25mA
- Synchronous Burst Write current(66MHz/83MHz, single) : 20/25mA
- Load current : 50mA
- Program current : 35mA
- Erase current : 40mA

- Endurance : 50K Program/Erase Cycles (SLC)

10K Program/Erase Cycles (MLC)

- Data Retention : 10 Years(SLC) /10 Years(MLC)

- Write Protection for BootRAM
- Write Protection for NAND Flash Array
- Write Protection during power-up
- Write Protection during power-down

- INT pin indicates Ready / Busy
- Polling the interrupt register status bit
- by ID register

63ball, 10mm x 13mm x max 1.0mmt , 0.8mm ball pitch FBGA
63ball, 10mm x 13mm x max 1.2mmt , 0.8mm ball pitch FBGA
63ball, 10mm x 13mm x max 1.4mmt , 0.8mm ball pitch FBGA (TBD)

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