Samsung FLEX-MUXONENAND KFN8GH6Q4M - Manual (Page 61)

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
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Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
3.4.3.1 Unlocked NAND Array Write Protection State
An Unlocked block can be programmed or erased. The status of an unlocked block can be changed to locked or locked-tight using the appro-
priate software command(Locked-tight state can be achieved in 2 steps. First, the block should be locked via the lock command. Then, Lock
tight command must be issued.).
Only one block can be released from lock state to unlock state with Unlock command and addresses. The unlocked block can be changed
with new lock command. Therefore, each block has its own lock/unlock/lock-tight state.
NOTE :
Even though SBA is fixed to 000h, Unlock will be done for all block. All block unlock is not valid if there is a lock-tight block. With DDP, all block unlock command
must be issued on each chip.
3.4.3.2 Locked NAND Array Write Protection State
A Locked block cannot be programmed or erased. All blocks default to a locked state following a Cold or Warm Reset. Unlocked blocks can be
changed to locked using the Lock block command. The status of a locked block can be changed to unlocked or locked-tight using the appro-
priate software command.
Unlock Command Sequence:
Start block address+Unlock block command (0023h)
Unlocked
All Block Unlock Command Sequence:
Start block address(000h)+All Block Unlock command (0027h)
Unlocked
Lock Command Sequence:
Start block address+Lock block command (002Ah)
Locked