Samsung FLEX-MUXONENAND KFN8GH6Q4M - Manual (Page 87)

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
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FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
3.12.1.1 PI Block Access mode entry
The PI area is a separate part of the NAND Flash Array memory. It is accessed by issuing PI Access command(66h) instead of writing a Flash
Block Address(FBA) in the StartAddress1 register.
After being accessed through the PI Access Command, the contents of PI memory area can be programmed, erased or loaded using the
same operations as a normal program, erase or load operation to the NAND Flash Array memory.
PI Block Access mode entry Flow Chart
NOTE :
1) FBA(NAND Flash Block Address) could be omitted or any address.
2) ‘Write 0 to interrupt register’ step may be ignored when using INT auto mode. Refer to chapter 2.8.18.1
Select DataRAM for DDP
Add: F101h DQ=DBS*
Write ‘DFS*, FBA’ of Flash 1)
Add: F100h DQ=DFS*, FBA
Start
Write ‘PI Access’ Command
Add: F220h DQ=0066h
Wait for INT register
Add: F241h DQ[15]=INT
low to high transition
Write 0 to interrupt register 2)
Add: F241h DQ=0000h
PI Block Access mode entry completed
* DBS, DFS is for DDP