12 flash timing – Texas Instruments TMS320F2802 User Manual
Page 131
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SPRS230N – OCTOBER 2003 – REVISED MAY 2012
6.12 Flash Timing
Table 6-43. Flash Endurance for A and S Temperature Material
(1)
ERASE/PROGRAM
MIN
TYP
MAX
UNIT
TEMPERATURE
N
f
Flash endurance for the array (write/erase cycles)
0°C to 85°C (ambient)
20000
50000
cycles
N
OTP
OTP endurance for the array (write cycles)
0°C to 85°C (ambient)
1
write
(1)
Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.
Table 6-44. Flash Endurance for Q Temperature Material
(1)
ERASE/PROGRAM
MIN
TYP
MAX
UNIT
TEMPERATURE
N
f
Flash endurance for the array (write/erase cycles)
–40°C to 125°C (ambient)
20000
50000
cycles
N
OTP
OTP endurance for the array (write cycles)
–40°C to 125°C (ambient)
1
write
(1)
Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.
Table 6-45. Flash Parameters at 100-MHz SYSCLKOUT
PARAMETER
(1)
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Program
16-Bit Word
50
μ
s
Time
16K Sector
500
ms
8K Sector
250
ms
4K Sector
125
ms
Erase
16K Sector
2
s
Time
(2)
8K Sector
2
s
4K Sector
2
s
I
DD3VFLP
V
DD3VFL
current consumption during the
Erase
75
mA
Erase/Program cycle
Program
35
mA
I
DDP
V
DD
current consumption during
140
mA
Erase/Program cycle
I
DDIOP
V
DDIO
current consumption during
20
mA
Erase/Program cycle
(1)
Typical parameters as seen at room temperature including function call overhead, with all peripherals off.
(2)
The on-chip flash memory is in an erased state when the device is shipped from TI. As such, erasing the flash memory is not required
prior to programming, when programming the device for the first time. However, the erase operation is needed on all subsequent
programming operations.
Copyright © 2003–2012, Texas Instruments Incorporated
Electrical Specifications
131
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