Texas Instruments DM648 DSP User Manual

Page 21

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Col. 0

Col. 1

Col. 2

Col. 3

Col. 4

Col. M−1

Col. M

Row 0, bank 0

Row 0, bank 1

Row 0, bank 2

Row 0, bank P

Row 1, bank 1

Row 1, bank 0

Row 1, bank 2

Row 1, bank P

Row N, bank 2

Row N, bank 1

Row N, bank 0

Row N, bank P

Peripheral Architecture

Figure 11

shows how the DSP memory map is partitioned into columns, rows, and banks. Note that during

a linear access, the DDR2 memory controller increments the column address as the logical address
increments. When the DDR2 memory controller reaches a page/row boundary, it moves onto the same
page/row in the next bank. This movement continues until the same page has been accessed in all banks.
To the DDR2 SDRAM, this process looks as shown on

Figure 14

.

By traversing across banks while remaining on the same row/page, the DDR2 memory controller
maximizes the number of activated banks for a linear access. This results in the maximum number of
open pages when performing a linear access being equal to the number of banks. Note that the DDR2
memory controller never opens more than one page per bank.

Ending the current access is not a condition that forces the active DDR2 SDRAM row/page to be closed.
The DDR2 memory controller leaves the active row open until it becomes necessary to close it. This
decreases the deactivate-reactivate overhead.

Figure 13. Logical Address-to-DDR2 SDRAM Address Map

A

M is number of columns (as determined by PAGESIZE) minus 1, P is number of banks (as determined by IBANK)
minus 1, and N is number of rows (as determined by both PAGESIZE and IBANK) minus 1.

SPRUEK5A – October 2007

DSP DDR2 Memory Controller

21

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