Diodes ZXBM5210 - Manual (Page 4)

ZXBM5210
Document number: DS36765 Rev. 1 - 2
4 of 17
www.diodes.com
December 2013
© Diodes Incorporated
NEW PROD
UC
T
ZXBM5210
Electrical Characteristics
(Note 9)(@T
A
= +25°C, V
DD
= 12V, unless otherwise specified.)
Symbol Characteristics Conditions Min Typ Max Unit
I
DD
Supply Current No Load — 0.85 2.5 mA
I
DD_STNDBY
Standby Supply Current FWD=REV=LOW (GND) — 32 45 uA
V
UV_TH
Under Voltage lock Out Threshold Voltage Decreasing — 2.6 — V
V
UVLO_R
Under Voltage Lock Out Release Threshold Voltage Increasing — 2.8 3.0 V
V
UV_HYS
Under Voltage Hysteresis Voltage Increasing — 200 — mV
V
OV_TH
Overvoltage Threshold Voltage Increasing — 20.7 24 V
V
OV_RLTH
Overvoltage Release Threshold Voltage Decreasing 17.0 19 — V
V
OH
Output Voltage High
I
OUT
= 300mA,
T
A
= - 40 °C to +105°C
V
DD
- 0.25 V
DD
- 0.15 — V
I
OUT
=500mA
T
A
= - 40 °C to +105°C
V
DD
- 0.43 V
DD
- 0.25 — V
V
OL
Output Voltage Low
I
OUT
= 300mA,
T
A
= - 40 °C to +105°C
— 0.15 0.25 V
I
OUT
= 500mA,
T
A
= - 40 °C to +105°C
— 0.25 0.43 V
V
OH
+ V
OL
Output voltage of N- and PMOS and bond
wire voltage drop combined
I
OUT
= 300mA,
T
A
= - 40 °C to +105°C
— 0.3 0.5 V
I
OUT
= 500mA,
T
A
= - 40 °C to +105°C
— 0.5 0.86 V
I
OUT
= 300mA, V
DD
= 3V
T
A
= - 40 °C to +105°C
— 0.39 0.66 V
R
ON_Total
Combined N- and PMOS R
DSON
including
bond wire resistance
I
OUT
= 500mA,
T
A
= - 40 °C to +105°C
— 1 1.72 Ω
I
OUT
= 300mA, V
DD
= 3V
T
A
= - 40 °C to +105°C
— 1.3 2.2 Ω
I
LIM_TH
Over current protection threshold 1.2 1.5 A
V
REF
V
REF
voltage range
( DC voltage speed control mode)
3 —
V
DD
(18V max)
V
I
VREF
V
REF
bias current
( DC voltage speed control mode)
V
REF
= V
DD
-15 0 15 μA
F
OUT
Output PWM switching frequency
(Internal PWM oscillator) VREF control mode 20 26.5 35 kHz
PWM speed control mode 20 — 100 kHz
F
FWD_REV
Input PWM frequency of speed control
signal
PWM control mode 20 — 100 kHz
T
DEAD
Dead time between current reversal
V
DD
= 3V to 18V
T
A
= - 40 °C to +105°C
2.1 3 3.9 μs
t
SDN_DELAY
Shutdown delay – Internal circuits active
after FWD = REV = L
(except from brake mode)
FWD = GND
REV = GND
125 180 — μs
V
FWDH
FWD Input H Level 2 — 5.5 V
V
FWDL
FWD Input L Level 0 — 0.8 V
I
FWDH
FWD pin current – H Level FWD pin: V
FWD
= 5V — 50 — μ A
I
FWDL
FWD pin current – L Level FWD pin: V
FWD
= 0V — 50 — μ A
V
REVH
REV Input H Level 2 — 5.5 V
V
REVL
REV Input L Level 0 — 0.8 V
I
REVH
REV pin current – H Level REV pin: V
RVS
= 5V — 50 — μ A
I
REVL
REV pin current – L Level REV pin: V
RVS
= 0V — 50 — μ A
D
PWM_MIN
Output minimum duty ratio 0% 100 %
Tj_
SDN_TH
IC junction temperature thermal shutdown
threshold
— 165 — o C
Tj_
SDN_HYST
IC junction temperature thermal shutdown
hysteresis
— 25 — o C
Note : 9. Typical data is at T A = +25 °C, V
DD
= 12V. The maximum and minimum parameters values over the operating temperature range are not tested in
production, they are guaranteed by design, characterization and process control.