1 inab dc characteristics, 2 inbtn dc characteristics, 3 inpci dc characteristics – AMD Geode SC1201 User Manual

Page 372: Section 9.2.1, Section 9.2.2, Section 9.2.3

Advertising
background image

372

AMD Geode™ SC1200/SC1201 Processor Data Book

Electrical Specifications

32579B

9.2.1

IN

AB

DC Characteristics

9.2.2

IN

BTN

DC Characteristics

9.2.3

IN

PCI

DC Characteristics

Note that the buffer type for PCICLK (ball A7) is IN

T

- not IN

PCI

.

Symbol

Parameter

Min

Max

Unit

Comments

V

IH

Input High Voltage

1.4

V

V

IL

Input Low Voltage

-0.5

(Note 1

)

0.8

V

I

IL

Input Leakage Current

10

µA

V

IN

= V

IO

-10

µA

V

IN

= V

SS

V

HIS

Input hysteresis

150

mV

Note 1. Not 100% tested.

Symbol

Parameter

Min

Max

Unit

Comments

V

IH

Input High Voltage

2.0

V

SB

+0.3

(Note 1)

V

V

IL

Input Low Voltage

-0.5

(Note 1)

0.8

V

I

IL

Input Leakage Current

5

µA

V

IN

= V

SB

-36

µA

V

IN

= V

SS

V

HIS

Input Hysteresis

250

mV

Note 1

Note 1. Not 100% tested.

Symbol

Parameter

Min

Max

Unit

Comments

V

IH

Input High Voltage

0.5V

IO

V

IO

+0.3

(Note 1)

Note 1. Not 100% tested.

V

V

IL

Input Low Voltage

-0.5

(Note 1)

0.3V

IO

V

V

IPU

Input Pull-up Voltage

0.7V

IO

V

Note 2

Note 2. Not 100% tested. This parameter indicates the minimum voltage to which pull-up resistors are calculated in order

to pull a floated network.

l

IL

Input Leakage Current

+/-10

µA

0 < V

IN

< V

IO

, Note 3, Note 4

Note 3. Input leakage currents include HiZ output leakage for all bidirectional buffers with TRI-STATE outputs.
Note 4. See Exceptions 2 and 3 in Section 9.2.15.1 on page 375.

Advertising
This manual is related to the following products: