Igbt operation discussion and diagrams, Modulation circuitry. see, Igbt operation – Lincoln Electric INVERTEC V250-S User Manual
Page 31: Theory of operation, Insulated gate bipolar transistor (igbt) operation
E-7
THEORY OF OPERATION
E-7
INSULATED GATE BIPOLAR
TRANSISTOR (IGBT) OPERATION
An IGBT is a type of transistor. IGBTs are semicon-
ductors well suited for high frequency switching and
high current applications.
Drawing A shows an IGBT in a passive mode. There
is no gate signal, zero volts relative to the source, and
therefore, no current flow. The drain terminal of the
IGBT may be connected to a voltage supply; but since
there is no conduction the circuit will not supply cur-
rent to components connected to the source. The cir-
cuit is turned off like a light switch in the OFF position.
Drawing B shows the IGBT in an active mode. When
the gate signal, a positive DC voltage relative to the
source, is applied to the gate terminal of the IGBT, it
is capable of conducting current. A voltage supply
connected to the drain terminal will allow the IGBT to
conduct and supply current to circuit components
coupled to the source. Current will flow through the
conducting IGBT to downstream components as long
as the positive gate signal is present. This is similar
to turning ON a light switch.
FIGURE E.6 IGBT OPERATION
INVERTEC V250-S
DRAIN
SOURCE
GATE
INJECTING LAYER
BUFFER LAYER
DRAIN DRIFT REGION
BODY REGION
p +
n +
n -
p
n +
n +
DRAIN
SOURCE
GATE
INJECTING LAYER
BUFFER LAYER
DRAIN DRIFT REGION
BODY REGION
p +
n +
n -
p
n +
n +
POSITIVE
VOLTAGE
APPLIED
B. ACTIVE
A. PASSIVE