NEC uPD75P3116 User Manual
Page 16
µ
PD75P3116
16
Data Sheet U11369EJ3V0DS
5. DIFFERENCES BETWEEN
µPD75P3116 AND µPD753104, 753106, 753108
The
µPD75P3116 replaces the internal mask ROM in the µPD753104, 753106, and 753108 with a one-time PROM
and features expanded ROM capacity. The
µPD75P3116’s Mk I mode supports the Mk I mode in the µPD753104, 753106,
and 753108 and the
µPD75P3116’s Mk II mode supports the Mk II mode in the µPD753104, 753106, and 753108.
Table 5-1 lists differences between the
µPD75P3116 and the µPD753104, 753106, and 753108. Be sure to check the
differences between these products before using them with PROMs for debugging or prototype testing of application
systems or, later, when using them with a mask ROM for full-scale production.
For details of the CPU functions and internal hardware, refer to the User’s Manual.
Table 5-1. Differences Between
µPD75P3116 and µPD753104, 753106, and 753108
Item
µPD753104
µPD753106
µPD753108
µPD75P3116
Program counter
12 bits
13 bits
14 bits
Program memory (bytes)
Mask ROM
Mask ROM
Mask ROM
One-time PROM
4096
6144
8192
16384
Data memory (
× 4 bits)
512
Mask options
Pull-up resistor for
Available
Not available
Port 5
(On chip/not on chip can be specified.)
(Not on chip)
Split resistor for
LCD driving power supply
Wait time after
Available
Not available
RESET
(Selectable between 2
17
/f
X
and 2
15
/f
X
)
Note
(Fixed to 2
15
/f
X
)
Note
Feedback resistor
Available
Not available
of subsystem clock
(Use/not use can be selected.)
(Enable)
Pin configuration
Pins 5 to 8
P30 to P33
P30/MD0 to P33/MD3
Pins 10 to 13
P50 to P53
P50/D4 to P53/D7
Pins 14 to 17
P60/KR0 to P63/KR3
P60/KR0/D0 to P63/KR3/D3
Pin 21
IC
V
PP
Other
Noise resistance and noise radiation may differ due to the different circuit sizes and mask
layouts.
Note 2
17
/f
X
: 21.8 ms at 6.0 MHz operation, 31.3 ms at 4.19 MHz operation
2
15
/f
X
: 5.46 ms at 6.0 MHz operation, 7.81 ms at 4.19 MHz operation
Caution
There are differences in the amount of noise tolerance and noise radiation between flash memory
versions and mask ROM versions. When considering changing from a flash memory version to a mask
ROM version during the process from experimental manufacturing to mass production, make sure to
sufficiently evaluate commercial samples (CS) (not engineering samples (ES)) of the mask ROM
versions.