Samsung S3C2440A - Manual (Page 555)

S3C2440A RISC MICROPROCESSOR ELECTRICAL DATA
27-37
Table 27-8 ROM/SRAM Bus Timing Constants
(V
DDi,
V
DDalive,
V
DDiarm
= 1.2 V
±
0.1 V, T
A
= -40 to 85
°
C, V
DDMOP
= 3.3V
±
0.3V / 3.0V
±
0.3V / 2.5V
±
0.2V / 1.8V
±
0.1V)
Parameter Symbol
Min
(V
DDMOP
=
3.3V/3.0V/2.5V/1.8V)
Typ
Max
(V
DDMOP
=
3.3V/3.0V/2.5V/1.8V)
Unit
ROM/SRAM Address Delay t
RAD
2 / 2 / 2 / 3 – 6 / 6 / 7 / 8 ns
ROM/SRAM Chip Select Delay t
RCD
2 / 2 / 3 / 3 – 6 / 6 / 6 / 7 ns
ROM/SRAM Output Enable Delay t
ROD
2 / 2 / 2 / 3 – 5 / 5 / 5 / 6 ns
ROM/SRAM Read Data Setup Time. t
RDS
1 / 1 / 1 / 2 – – / – / – / – ns
ROM/SRAM Read Data Hold Time. t
RDH
0 / 0 / 0 / 0 – – / – / – / – ns
ROM/SRAM Byte Enable Delay t
RBED
2 / 2 / 2 / 3 – 5 / 5 / 5 / 7 ns
ROM/SRAM Write Byte Enable Delay t
RWBED
2 / 2 / 2 / 3 – 5 / 5 / 6 / 7 ns
ROM/SRAM Output Data Delay t
RDD
2 / 2 / 2 / 2 – 6 / 6 / 6 / 7 ns
ROM/SRAM External Wait Setup Time t
WS
3 / 3 / 4 / 4 – – / – / – / – ns
ROM/SRAM External Wait Hold Time t
WH
0 / 0 / 0 / 0 – – / – / – / – ns
ROM/SRAM Write Enable Delay t
RWD
2 / 2 / 2 / 3 – 5 / 5 / 6 / 7 ns
Table 27-9 Memory Interface Timing Constants
(V
DDi,
V
DDalive,
V
DDiarm
= 1.2 V
±
0.1 V, T
A
= -40 to 85
°
C, V
DDMOP
= 3.3V
±
0.3V / 3.0V
±
0.3V / 2.5V
±
0.2V / 1.8V
±
0.1V)
Parameter Symbol Min Typ Max Unit
SDRAM Address Delay t
SAD
1 – 4 ns
SDRAM Chip Select Delay t
SCSD
1 – 3 ns
SDRAM Row Active Delay t
SRD
1 – 3 ns
SDRAM Column Active Delay t
SCD
1 – 3 ns
SDRAM Byte Enable Delay t
SBED
1 – 3 ns
SDRAM Write Enable Delay t
SWD
1 – 2 ns
SDRAM Read Data Setup Time t
SDS
2 / 3 / 3 / 5 * – – ns
SDRAM Read Data Hold Time t
SDH
0 – – ns
SDRAM Output Data Delay t
SDD
1 – 4 ns
SDRAM Clock Enable Delay T
cked
2 – 3 ns
NOTE: Minimum tSDS = 2ns / 3ns / 3ns, when VDDMOP = 3.3V / 3.0V / 2.5V / 1.8V respectively.