Static memory single write cycle – Cirrus Logic EP7312 User Manual

Page 23

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DS508F2

Copyright Cirrus Logic, Inc. 2011

(All Rights Reserved)

23

EP7312

High-Performance, Low-Power System on Chip

Static Memory Single Write Cycle

Note:

1. The cycle time can be extended by integer multiples of the clock period (22 ns at 45 MHz, 27 ns at 36 MHz, 54 ns at
18.432 MHz, and 77 ns at 13 MHz), by either driving EXPRDY low and/or by programming a number of wait states. EXPRDY is
sampled on the falling edge of EXPCLK before the data transfer. If low at this point, the transfer is delayed by one clock period
where EXPRDY is sampled again. EXPCLK need not be referenced when driving EXPRDY, but is shown for clarity.
2. Zero wait states for sequential writes is not permitted for memory devices which use nMWE pin, as this cannot be driven with

valid timing under zero wait state conditions.

3. Address, Data, Halfword, Word, and Write hold state until next cycle.

EXPCLK

nCS

A

nMWE

HALF-

WORD

WORD

D

WRITE

t

HWd

t

WDd

t

CSd

t

Ad

t

MWd

t

Dv

t

MWh

t

CSh

nMOE

EXPRDY

t

EXh

t

EXs

Figure 8. Static Memory Single Write Cycle Timing Measurement

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