NEC switch - Manual (Page 211)

CHAPTER 16 ELECTRICAL SPECIFICATIONS
User’s Manual U12978EJ3V0UD
211
System Clock Oscillation Circuit Characteristics (T
A
= −−−−40 to +85°°°°C, V
DD
= 4.0 to 5.5 V)
Resonator Recommended Circuit Parameter Conditions MIN. TYP. MAX. Unit
Oscillator frequency (f
X
) Note 1 6.0 6.0 6.0 MHz Crystal
X2 X1 V PP
C2 C1 Oscillation stabilization
time Note 2
10 ms
X1 input frequency (f
X
) Note 1 6.0 6.0 6.0 MHz External
clock
X1 X2
OPEN
X1 input high-low-level
width (t
XH
, t
XL
)
71 83 ns
Notes 1. Indicates only oscillator characteristics. Refer to AC Characteristics for the instruction execution
time.
2. Time required to oscillation after reset or STOP mode release. Use a resonator that can stabilize
oscillation before the oscillation stabilization time elapses.
Caution When using the system clock oscillator, wire as follows in the area enclosed by the broken lines
in the above figure to avoid an adverse effect from wiring capacitance.
• Keep the wiring length as short as possible.
•••• Do not cross the wiring with other signal lines.
•••• Do not route the wiring near a signal line through which a high fluctuating current flows.
•••• Always make the ground point of the oscillator capacitor the same potential as V
SS0 .
•••• Do not ground the capacitor to a ground pattern through which a high current flows.
•••• Do not fetch signals from the oscillator.
Remark For the resonator selection and oscillator constant, customers are required to either evaluate the
oscillation themselves or apply to the resonator manufacturer for evaluation.
Flash Memory Write/Erase Characteristics (T A = 10 to 40
°°°°C, V
DD = 4.0 to 5.5 V) (
µµµµPD78F9801 only)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Write current (V DD pin) I DDW When V PP supply voltage = V PP1
(in 6.0 MHz operation mode)
18 Note mA
Write current (V
PP
pin) I
PPW
When V
PP
supply voltage = V
PP1
7.5 mA
Erase current (V DD pin) I DDE When V PP supply voltage = V PP1
(in 6.0 MHz operation mode)
18 Note mA
Erase current (V
PP
pin) I
PPE
When V
PP
supply voltage = V
PP1
100 mA
Unit erase time t er 1 1 1 s
Total erase time t era 20 s
Write count Erase/write are regarded as 1 cycle. 1 Times
V PP0 In normal operation 0 0.2V DD V V PP supply voltage
V PP1 During flash memory programming 9.7 10.0 10.3 V
Note The current flowing to the ports (including the current flowing through the on-chip pull-up resistors) is not
included.