Table 13-7. 12-bit adc electrical characteristics – Samsung S3F401F User Manual
Page 275

S3F401F_UM_REV1.00
ELECTRICAL
DATA
13-5
Table 13-7. 12-bit ADC Electrical Characteristics
(T
A
= −40°C to + 85°C, V
DD
= 3.3
± 0.3V)
Parameter
Symbol
Min
Typ
Max
Unit
Resolution
−
12 12
12
Bit
ADC Reference Voltage
AV
DD
3.0 3.3
3.6 V
Analog Input Voltage
AV
IN
AV
SS
–
AV
DD
V
Maximum Conversion Rate
F
ADC
– –
4
MHz
Conversion Time
T
ADC
9+ N
(NOTE1)
– –
1/F
ADC
Differential Linearity Error ( F
ADC
=
1MHz)
DNE
(NOTE2)
–
±0.7
±1.0
LSB
(NOTE3)
Integral Linearity Error (F
ADC
=
1MHz)
INE
(NOTE2)
–
±1.8
± .2
Top Offset Voltage Error (AV
DD
=3.3V)
EOT –
40
80
mV
Bottom Offset Voltage Error
(AV
DD
= 3.3V)
EOB –
40
80
NOTES:
1. N= 0, 1, or 2
Conversion time is different from depending on the ADC mode in conversion.
ADC Sampling Mode
ADCCON Register
Min
Typ
Max
Unit
1-point sampling
ADCCON.9
−.8 = 01b
9
−
−
2-point simultaneous sampling
ADCCON.9
−.8 = 10b
10
−
−
3-point simultaneous sampling
ADCCON.9
−.8 = 00b
11
−
−
1/F
ADC
ADC Sampling Mode
ADCCON Register
Min
Typ
Max
Unit
1-point sampling
ADCCON.9
−.8 = 01b
2.25
−
−
2-point simultaneous sampling
ADCCON.9
−.8 = 10b
2.5
−
−
3-point simultaneous sampling
ADCCON.9
−.8 = 00b
2.75
−
−
us
2. DLE and ILE have the same amount of information because ILE is the linear function of DLE in original.
In normal test, histogram method is used because of uncertainty. Histogram method counts the occurrence of each digital
code in digital domain, instead of measuring each segment width in analog domain. DLE and ILE provide a measure of
linearity (regularity, consistency) of ADC.
3. LSB: Least Significant Bit