Samsung S3F401F User Manual
Page 278
ELECTRICAL DATA
S3F401F_UM_REV1.00
13-8
Table 13-8. AC Electrical Characteristics for Internal Flash ROM
(T
A
= −40°C to + 85°C, V
DD
= 3.3
± 0.3V)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Programming Time
(NOTE1)
Ft
P
V
DD
= 3.3V
30 40
50 us
Chip Erasing Time
(NOTE 2)
Ft
CE
40
50
60
ms
Sector Erasing Time
(NOTE 3)
Ft
SE
40
50
60
ms
Data Access Time
Ft
R
−
22.2
−
ns
The number of Writing / Erasing
Fn
WE
−
10,000
−
−
Times
Data Retention
Ft
DR
−
10
−
−
Years
NOTES:
1. The programming time is the time during which one word (32-bit) is programmed.
2. The Chip erasing time is the time during which all 256K-byte block is erased
3. The Sector erasing time is the time during which all 256-byte block is erased.
♦ The chip erasing is available in ‘Tool Program Mode’ only.