GE Industrial Solutions 6KCV301DGF - Manual (Page 20)

—————— Digital General Function Card —————— 20
GEI-100430
- DBASE_FLASH area in which the user’s customization is stored.
- DBASE_EEPROM area in which the parameters with attribute MEMO equal to
RUN are stored
RAM: work FLASH: firmware FLASH: parameters EEPROM: data
DB_RAM DB_ROM DB_FLASH DB_EEPROM
The only area that will be used during the normal operations is the DB_RAM. The
other three areas will be used only to manage the initialization and the storage of the
data contained in the DBASE_RAM area.
To understand why there are 4 different areas and how they behave, it is necessary to
illustrate the kind of storage in which they have been allocated:
- DBASE_RAM allocated in RAM storage. This means that when the DGF is
powered off all data contained in it are lost.
- DBASE_ROM allocated in the FLASH storage. This means that this
information can neither be lost nor modified by the user.
- DBASE_FLASH allocated in a special area of the FLASH storage, which is
different from DBASE_ROM. This means that information is
not lost at power off. This area can be deleted or rewritten
through particular commands at the user’s disposal. Unfortu-
nately the reading and writing operations are executed quite
slowly , 2 or 3 seconds, so these operations are possible only
in particular conditions.
- DBASE_EEPROM allocated in EEPROM storage. This storage can be deleted or
written quickly and all data contained in it are not lost, even
when the DGF is powered off.
As we described above, the software operates from DBASE_RAM. This area is allocated
RAM storage. This means that at power-on the data is unpredictable, so it is necessary
to carry out an initialization. The operation is done by copying the DBASE_FLASH
into the DBASE_RAM, in other words, the default values are loaded.
The DBASE_RAM is composed of a collection of records. Each record contains the
parameter and the information that describes it.