E - edit memory, Edit memory -30 – GE 68K System User Manual

Page 56

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GE Energy Services

68K System Monitor

User's Guide

SWM0023 1.00 2

General

3-30

Full Release

E - Edit Memory

Platform

þ

CPM

þ

D20
D20 Base

þ

D20 ME
D20 Base

þ

D20/200
CCU Base

þ

D20/200 ME
CCU Base

þ

D25

Use this command to display and modify memory locations. The command does not
verify memory contents after they are stored. After entering the command, it
prompts you with the current contents of a memory location.

The different display and edit formats supported are:
• bytes
• words
• floating-point numbers
• scientific format
• double-precision numbers

− hexadecimal format
− hexadecimal format
− hexadecimal format
− scientific format
− scientific format

Description

When the contents of the memory location appear, type:
• a new value to store at the location
• a hyphen (-) to back up one location
• a plus sign (+) or the

ENTER

key to move forward one location (CCU / D25 only)

• a period (.) to exit this function

Scientific values must subscribe to the following format:

[±] mantissa [e [±] exponent]

The mantissa can contain a decimal point. This command differentiates between a
negative number and a hyphen.

Syntax

Below is usage and syntax information for this command

Command Format

CPM / D20: e [/(b | w | l | f | d)] address

CCU / CCUME / D25: e [/(b | w | l | f | d)] [/x] address

Variables

/b

= bytes (octets), the default mode

/w

= words

/l

= long words

/f

= floating-point numbers

/d

= double-precision numbers

/x

= do not display existing contents of memory

location being edited

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