INFICON IQM-233 Thin Film Deposition Controller PCI-Express Card Operating Manual - Manual (Page 111)

A - 7
PN
07
4-
58
4-
P1
A
IQM-233 Operating Manual
Sc 3.000 0.910 scandium
Sc
2
O
3
3.860 *1.000 scandium oxide
Se 4.810 0.864 selenium
Si 2.320 0.712 silicon
Si
3
N
4
3.440 *1.000 silicon nitride
SiC 3.220 *1.000 silicon carbide
SiO 2.130 0.870 silicon (ii) oxide
SiO
2
2.648 1.000 silicon dioxide
Sm 7.540 0.890 samarium
Sm
2
O
3
7.430 *1.000 samarium oxide
Sn 7.300 0.724 tin
SnO
2
6.950 *1.000 tin oxide
SnS 5.080 *1.000 tin sulfide
SnSe 6.180 *1.000 tin selenide
SnTe 6.440 *1.000 tin telluride
Sr 2.600 *1.000 strontium
SrF
2
4.277 0.727 strontium fluroide
SrO 4.990 0.517 strontium oxide
Ta 16.600 0.262 tantalum
Ta
2
O
5
8.200 0.300 tantalum (v) oxide
TaB
2
11.150 *1.000 tantalum boride
TaC 13.900 *1.000 tantalum carbide
TaN 16.300 *1.000 tantalum nitride
Tb 8.270 0.660 terbium
Tc 11.500 *1.000 technetium
Te 6.250 0.900 tellurium
TeO
2
5.990 0.862 tellurium oxide
Th 11.694 0.484 thorium
ThF
4
6.320 *1.000 thorium (iv) fluoride
ThO
2
9.860 0.284 thorium dioxide
ThOF
2
9.100 *1.000 thorium oxyfluoride
Ti 4.500 0.628 titanium
Ti
2
0
3
4.600 *1.000 titanium sesquioxide
Table A-1 Material table (continued)
Formula Density Z-Ratio Material Name