Texas Instruments Digital Signal Processor SM320F2812-HT User Manual

Page 122

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SM320F2812-HT

SGUS062B

JUNE 2009

REVISED JUNE 2011

www.ti.com

6.25 External Interface Ready-on-Read Timing With One External Wait State

Table 6-37. External Memory Interface Read Switching Characteristics (Ready-on-Read, 1 Wait State)

(1)

PARAMETER

MIN

MAX

UNIT

t

d(XCOH-XZCSL)

Delay time, XCLKOUT high to zone chip-select active low

1

ns

t

d(XCOHL-XZCSH)

Delay time, XCLKOUT high/low to zone chip-select inactive high

2

3

ns

t

d(XCOH-XA)

Delay time, XCLKOUT high to address valid

2

ns

t

d(XCOHL-XRDL)

Delay time, XCLKOUT high/low to XRD active low

1

ns

t

d(XCOHL-XRDH

Delay time, XCLKOUT high/low to XRD inactive high

2

1

ns

t

h(XA)XZCSH

Hold time, address valid after zone chip-select inactive high

(2)

ns

t

h(XA)XRD

Hold time, address valid after XRD inactive high

(2)

ns

(1)

Not production tested.

(2)

During inactive cycles, the XINTF address bus always holds the last address put out on the bus. This includes alignment cycles.

Table 6-38. External Memory Interface Read Timing Requirements (Ready-on-Read, 1 Wait State)

(1)

MIN

MAX

UNIT

t

a(A)

Access time, read data from address valid

(LR + AR)

14

(2)

ns

t

a(XRD)

Access time, read data valid from XRD active low

AR

12

(2)

ns

t

su(XD)XRD

Setup time, read data valid before XRD strobe inactive high

12

ns

t

h(XD)XRD

Hold time, read data valid after XRD inactive high

0

ns

(1)

Not production tested.

(2)

LR = Lead period, read access. AR = Active period, read access. See

Table 6-25

.

Table 6-39. Synchronous XREADY Timing Requirements (Ready-on-Read, 1 Wait State)

(1) (2)

MIN

MAX

UNIT

t

su(XRDYsynchL)XCOHL

Setup time, XREADY (Synch) low before XCLKOUT high/low

15

ns

t

h(XRDYsynchL)

Hold time, XREADY (Synch) low

12

ns

t

e(XRDYsynchH)

Earliest time XREADY (Synch) can go high before the sampling XCLKOUT edge

3

ns

t

su(XRDYsynchH)XCOHL

Setup time, XREADY (Synch) high before XCLKOUT high/low

15

ns

t

h(XRDYsynchH)XZCSH

Hold time, XREADY (Synch) held high after zone chip select high

0

ns

(1)

Not production tested.

(2)

The first XREADY (Synch) sample occurs with respect to E in

Figure 6-31

:

E = (XRDLEAD + XRDACTIVE) t

c(XTIM)

When first sampled, if XREADY (Synch) is found to be high, then the access completes. If XREADY (Synch) is found to be low, it is
sampled again each t

c(XTIM)

until it is found to be high.

For each sample (n) the setup time (D) with respect to the beginning of the access can be calculated as:
D = (XRDLEAD + XRDACTIVE + n

1) t

c(XTIM)

t

su(XRDYsynchL)XCOHL

where n is the sample number: n = 1, 2, 3, and so forth.

Table 6-40. Asynchronous XREADY Timing Requirements (Ready-on-Read, 1 Wait State)

(1) (2)

MIN

MAX

UNIT

t

su(XRDYAsynchL)XCOHL

Setup time, XREADY (Asynch) low before XCLKOUT high/low

11

ns

t

h(XRDYAsynchL)

Hold time, XREADY (Asynch) low

8

ns

Earliest time XREADY (Asynch) can go high before the sampling XCLKOUT

t

e(XRDYAsynchH)

3

ns

edge

t

su(XRDYAsynchH)XCOHL

Setup time, XREADY (Asynch) high before XCLKOUT high/low

11

ns

(1)

Not production tested.

(2)

The first XREADY (Asynch) sample occurs with respect to E in

Figure 6-32

:

E = (XRDLEAD + XRDACTIVE

2) t

c(XTIM)

When first sampled, if XREADY (Asynch) is found to be high, then the access completes. If XREADY (Asynch) is found to be low, it wis
sampled again each t

c(XTIM)

until it is found to be high.

For each sample, setup time from the beginning of the access can be calculated as:
D = (XRDLEAD + XRDACTIVE

3 + n) t

c(XTIM)

t

su(XRDYasynchL)XCOHL

where n is the sample number: n = 1, 2, 3, and so forth.

122

Electrical Specifications

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©

2009

2011, Texas Instruments Incorporated

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