Texas Instruments Digital Signal Processor SM320F2812-HT User Manual

Page 125

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SM320F2812-HT

www.ti.com

SGUS062B

JUNE 2009

REVISED JUNE 2011

6.26 External Interface Ready-on-Write Timing With One External Wait State

Table 6-41. External Memory Interface Write Switching Characteristics (Ready-on-Write, 1 Wait State)

(1)

PARAMETER

MIN

MAX

UNIT

t

d(XCOH-XZCSL)

Delay time, XCLKOUT high to zone chip-select active low

1

ns

t

d(XCOHL-XZCSH)

Delay time, XCLKOUT high or low to zone chip-select inactive high

2

3

ns

t

d(XCOH-XA)

Delay time, XCLKOUT high to address valid

2

ns

t

d(XCOHL-XWEL)

Delay time, XCLKOUT high/low to XWE low

2

ns

t

d(XCOHL-XWEH)

Delay time, XCLKOUT high/low to XWE high

2

ns

t

d(XCOH-XRNWL)

Delay time, XCLKOUT high to XR/W low

1

ns

t

d(XCOHL-XRNWH)

Delay time, XCLKOUT high/low to XR/W high

2

1

ns

t

en(XD)XWEL

Enable time, data bus driven from XWE low

0

ns

t

d(XWEL-XD)

Delay time, data valid after XWE active low

4

ns

t

h(XA)XZCSH

Hold time, address valid after zone chip-select inactive high

(2)

ns

t

h(XD)XWE

Hold time, write data valid after XWE inactive high

TW

2

(3)

ns

t

dis(XD)XRNW

Data bus disabled after XR/W inactive high

4

ns

(1)

Not production tested.

(2)

During inactive cycles, the XINTF address bus always holds the last address put out on the bus. This includes alignment cycles.

(3)

TW = trail period, write access (see

Table 6-25

)

Table 6-42. Synchronous XREADY Timing Requirements (Ready-on-Write, 1 Wait State)

(1) (2)

MIN

MAX

UNIT

t

su(XRDYsynchL)XCOHL

Setup time, XREADY (Synch) low before XCLKOUT high/low

15

ns

t

h(XRDYsynchL)

Hold time, XREADY (Synch) low

12

ns

t

e(XRDYsynchH)

Earliest time XREADY (Synch) can go high before the sampling XCLKOUT edge

3

ns

t

su(XRDYsynchH)XCOHL

Setup time, XREADY (Synch) high before XCLKOUT high/low

15

ns

t

h(XRDYsynchH)XZCSH

Hold time, XREADY (Synch) held high after zone chip select high

0

ns

(1)

Not production tested.

(2)

The first XREADY (Synch) sample occurs with respect to E in

Figure 6-33

:

E =(XWRLEAD + XWRACTIVE) t

c(XTIM)

When first sampled, if XREADY (Synch) is found to be high, then the access completes. If XREADY (Synch) is found to be low, it is
sampled again each t

c(XTIM)

until it is found to be high.

For each sample, setup time from the beginning of the access can be calculated as:
D =(XWRLEAD + XWRACTIVE + n

1) t

c(XTIM)

t

su(XRDYsynchL)XCOHL

where n is the sample number: n = 1, 2, 3, and so forth.

Table 6-43. Asynchronous XREADY Timing Requirements (Ready-on-Write, 1 Wait State)

(1) (2)

MIN

MAX

UNIT

t

su(XRDYasynchL)XCOHL

Setup time, XREADY (Asynch) low before XCLKOUT high/low

11

ns

t

h(XRDYasynchL)

Hold time, XREADY (Asynch) low

8

ns

t

e(XRDYasynchH)

Earliest time XREADY (Asynch) can go high before the sampling XCLKOUT edge

3

ns

t

su(XRDYasynchH)XCOHL

Setup time, XREADY (Asynch) high before XCLKOUT high/low

11

ns

t

h(XRDYasynchH)XZCSH

Hold time, XREADY (Asynch) held high after zone chip select high

0

ns

(1)

Not production tested.

(2)

The first XREADY (Synch) sample occurs with respect to E in Figure 6-33:
E = (XWRLEAD + XWRACTIVE

2) t

c(XTIM)

When first sampled, if XREADY (Asynch) is found to be high, then the access completes. If XREADY (Asynch) is found to be low, it is
sampled again each t

c(XTIM)

until it is found to be high.

For each sample, setup time from the beginning of the access can be calculated as:
D = (XWRLEAD + XWRACTIVE

3 + n) t

c(XTIM)

t

su(XRDYasynchL)XCOHL

where n is the sample number: n = 1, 2, 3, and so forth.

Copyright

©

2009

2011, Texas Instruments Incorporated

Electrical Specifications

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