Ctl_mem_addr_h, Ctl_mem_cas_n_h – Altera External Memory PHY Interface User Manual

Page 61

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Chapter 3: Functional Description—ALTMEMPHY (nonAFI)

3–45

Design Considerations

© January 2010

Altera Corporation

External Memory PHY Interface (ALTMEMPHY) (nonAFI) Megafunction User Guide

Figure 3–13

shows the sequence of operations that happen during the write

transactions. The write operation is explained step-by-step below. All the inputs to the
ALTMEMPHY megafunction from the controller should be generated using
phy_clk

.

1

The signals under the PHY command input label are the signals from the controller to
the ALTMEMPHY megafunction and the signals under the PHY command output
label are the signals coming out of the ALTMEMPHY megafunction and input to the
memory device.

Some of the address and command signals generated by the controller are:

ctl_mem_addr_h

ctl_mem_cas_n_h

Figure 3–13. Write Commands and Write Data (Half-Rate Controller)

Notes to

Figure 3–13

:

(1) The DDR command shows the command comprised of the command signals (ctl_mem_ras_n_h, ctl_mem_cas_n_h, and

ctl_mem_we_n_h)

seen at the ALTMEMPHY input. There can be more than one clock cycle of NOP between ACT to RD depending on the value

of t

RCD

parameter of your memory device.

(2) The DDR command shows the command comprised of the command signals (mem_ras_n_h, mem_cas_n_h, and mem_we_n_h) seen

at the memory interface.

DDR Command

(Note 1)

phy_clk

ctl_mem_addr_h

ctl_mem_cs_n_h

ctl_mem_odt_h

mem_addr

mem_cs_n

mem_odt

mem_dq

ctl_mem_wdata_valid

ctl_mem_wdata

0000

0003

0000

0004

0008

000C

0010

0000

mem_dqs[1]

PHY Command Input

PHY Write Data Input

PHY Command Output

PHY Write Data Output

1

2

3

3

4

6

7

DDR Command

(Note 2)

NOP

PCH

NOP

ACT

NOP

WR

ACT

NOP

5

5

mem_clk

ACT

ACT

NOP

NOP

WR

WR

0003

0000

0004

0008

000C

0010

0000

0004

0008

cdb042d1cc72ad13

877d84bf...

13a1563...

26e92ac...

4ccf5491...

9883a83fb8e6045a

2d1b4d7...

5a369af...

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