Motorola ColdFire MCF5281 - Manual (Page 291)

Synchronous DRAM Controller Module
Freescale Semiconductor 15-19
Table 15-25. SDRAM Example Specifications
Parameter Specification
Speed grade (-8E) 40 MHz (25-ns period)
10 rows, 8 columns
Two bank-select lines to access four internal banks
ACTV -to-read/write delay (t
RCD
) 20 ns (min.)
Period between auto-refresh and ACTV command (t
RC
) 70 ns
ACTV command to precharge command (t
RAS
) 48 ns (min.)
Precharge command to ACTV command (t
RP
) 20 ns (min.)
Last data input to PALL command (t
RWL
) 1 bus clock (25 ns)
Auto-refresh period for 4096 rows (t
REF
) 64 mS
MCF5282 and MCF5216 ColdFire Microcontroller User’s Manual, Rev. 3