INFICON SQM-160 Thin Film Deposition Monitor - Manual (Page 114)

A - 4
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SQM-160 Operating Manual
Ge 5.350 0.516 Germanium
Ge
3
N
2
5.200 *1.000 Germanium Nitride
GeO
2
6.240 *1.000 Germanium Oxide
GeTe 6.200 *1.000 Germanium Telluride
Hf 13.090 0.360 Hafnium
HfB
2
10.500 *1.000 Hafnium Boride
HfC 12.200 *1.000 Hafnium Carbide
HfN 13.800 *1.000 Hafnium Nitride
HfO
2
9.680 *1.000 Hafnium Oxide
HfSi
2
7.200 *1.000 Hafnium Silicide
Hg 13.460 0.740 Mercury
Ho 8.800 0.580 Holminum
Ho
2
O
3
8.410 *1.000 Holminum Oxide
In 7.300 0.841 Indium
In
2
O
3
7.180 *1.000 Indiurn Sesquioxide
In
2
Se
3
5.700 *1.000 Indium Selenide
In
2
Te
3
5.800 *1.000 Indium Telluride
InAs 5.700 *1.000 Indium Arsenide
InP 4.800 *1.000 Indium Phosphide
InSb 5.760 0.769 Indium Antimonide
Ir 22.400 0.129 Iridium
K 0.860 10.189 Potassium
KBr 2.750 1.893 Potassium Bromide
KCI 1.980 2.050 Potassium Chloride
KF 2.480 *1.000 Potassium Fluoride
KI 3.128 2.077 Potassium Iodide
La 6.170 0.920 Lanthanum
La
2
O
3
6.510 *1.000 Lanthanum Oxide
LaB
6
2.610 *1.000 Lanthanurn Boride
LaF
3
5.940 *1.000 Lanthanum Fluoride
Li 0.530 5.900 Lithium
LiBr 3.470 1.230 Lithium Bromide
LiF 2.638 0.778 Lithium Fluoride
Table A-1 Material Table (continued)
Formula Density Z-Ratio Material Name