INFICON SQM-160 Thin Film Deposition Monitor - Manual (Page 118)

A - 8
IP
N 07
4-
51
1-
P1
C
SQM-160 Operating Manual
TiN 5.430 *1.000 Titanium Nitride
TiO 4.900 *1.000 Titanium Oxide
TiO
2
4.260 0.400 Titanium (IV) Oxide
TI 11.850 1.550 Thallium
TIBr 7.560 *1.000 Thallium Bromide
TICI 7.000 *1.000 Thallium Chloride
TII 7.090 *1.000 Thalliurn Iodide (B)
U 19.050 0.238 Uranium
U
3
O
8
8.300 *1.000 Tri Uranium Octoxide
U
4
O
9
10.969 0.348 Uranium Oxide
UO
2
10.970 0.286 Uranium Dioxide
V 5.960 0.530 Vanadium
V
2
O
5
3.360 *1.000 Vanadium Pentoxide
VB
2
5.100 *1.000 Vanadium Boride
VC 5.770 *1.000 Vanadium Carbide
VN 6.130 *1.000 Vanadium Nitride
VO
2
4.340 *1.000 Vanadium Dioxide
W 19.300 0.163 Tungsten
WB
2
10.770 *1.000 Tungsten Boride
WC 15.600 0.151 Tungsten Carbide
WO
3
7.160 *1.000 Tungsten Trioxide
WS
2
7.500 *1.000 Tungsten Disulphide
WSi
2
9.400 *1.000 Tungsten Silicide
Y 4.340 0.835 Yttrium
Y
2
0
3
5.010 *1.000 Yttrium Oxide
Yb 6.980 1.130 Ytterbium
Yb
2
O
3
9.170 *1.000 Ytterbium Oxide
Zn 7.040 0.514 Zinc
Zn
3
Sb
2
6.300 *1.000 Zinc Antimonide
ZnF
2
4.950 *1.000 Zinc Fluoride
ZnO 5.610 0.556 Zinc Oxide
ZnS 4.090 0.775 Zinc Sulfide
ZnSe 5.260 0.722 Zinc Selenide
Table A-1 Material Table (continued)
Formula Density Z-Ratio Material Name