Samsung S3F401F - Manual (Page 278)

ELECTRICAL DATA S3F401F_UM_REV1.00
13-8
Table 13-8. AC Electrical Characteristics for Internal Flash ROM
(T
A
= −40°C to + 85°C, V
DD
= 3.3
± 0.3V)
Parameter Symbol Conditions Min Typ Max Unit
Programming Time (NOTE1) Ft
P
V
DD
= 3.3V 30 40 50 us
Chip Erasing Time (NOTE 2) Ft
CE
40 50 60 ms
Sector Erasing Time (NOTE 3) Ft
SE
40 50 60 ms
Data Access Time Ft
R
−
22.2
−
ns
The number of Writing / Erasing Fn
WE
−
10,000
− −
Times
Data Retention Ft
DR
−
10
− −
Years
NOTES:
1. The programming time is the time during which one word (32-bit) is programmed.
2. The Chip erasing time is the time during which all 256K-byte block is erased
3. The Sector erasing time is the time during which all 256-byte block is erased.
♦ The chip erasing is available in ‘Tool Program Mode’ only.