Flash memory control register – Samsung S3F401F User Manual

Page 76

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INTERNAL FLASH ROM

S3F401F_UM_REV1.00

5-16

Flash Memory Control Register

FMUCON (0x00C)

Access: Read/Write

31 30 29 28 27 26 25 24

R/W-0 R/W-0 R/W-0 R/W-0 R/W-0 R/W-0 R/W-0 R/W-0

23 22 21 20 19 18 17 16

R/W-0 R/W-0 R/W-0 R/W-0 R/W-0 R/W-0 R/W-0 R/W-0

15 14 13 12 11 10 9

8

INTERLEAVE

R/W-0 R/W-0 R/W-0 R/W-0 R/W-0 R/W-0 R/W-0 R/W-0

7 6 5 4 3 2 1 0

UOSCEN

USTRSTPT

UOPGMR

UCPUH

UPGMR

USERSR

UCERSR

R/W-0 R/W-0 R/W-0 R/W-0 R/W-0 R/W-0 R/W-0 R/W-0

W: Write

R: Read

-0: 0 After reset

-1: 1 After reset

-U: Undefined after reset

UCERSR

Chip Erase Enable Bit

0 = Disable

1 = Enable

USERSR

Sector Erase Enable Bit

0 = Disable

1 = Enable

Note: This bit can be used in only user program mode.

UPGMR

Normal Program Enable Bit

0 = Disable

1 = Enable

UCPUH

CPU Hold Control Bit

0 = CPU work during Flash programming/erasing.
In this case, the flash programming/erasing code should not be on the internal flash ROM. The
advantage is that CPU can perform other tasks until the completion of an operation.

1 = CPU hold during Flash programming / erasing

Note: This bit can be used user and tool program mode. This bit can be read written data in specific

sequence. That mean’s although you write the ‘1’, when you read the register, the data will be ‘0’.

The

written data is affected at the time flash on-going, operation start bit is ‘1’.

UOPGMR

Option Program Enable Bit (For protection option setting)

0 = Disable

1 = Enable

Note: This bit can be used user and tool program mode.


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